HETEROJUNCTION BAND DISCONTINUITIES FOR GAAS GROWN ON GE(110) - TIME-VARIATION

被引：5

作者：

GRANT, RW

WALDROP, JR

KOWALCZYK, SP

KRAUT, EA

机构：

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90879-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：498 / 506

页数：9

共 27 条

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[12] FERMI LEVEL POSITION AND VALENCE BAND DISCONTINUITY AT GAAS/GE INTERFACES
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KRAUT, EA
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GRANT, RW
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[15] BAND DISCONTINUITIES AND INTERFACE FERMI-LEVEL POSITIONS IN GE-GAAS(110) HETEROJUNCTIONS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 684 - 686
[16] HEATS OF SOLUTION AND SUBSTITUTION IN SEMICONDUCTORS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 409 - 414
[17] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS
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[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1620 - 1623
[18] SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY
KRAUT, EA
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KOWALCZYK, SP
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1965 - 1977
[19] LATTICE-DISTORTIONS AND ENERGIES OF ATOMIC SUBSTITUTION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1267 - 1273
[20] HETEROSTRUCTURE DEVICES - A DEVICE PHYSICIST LOOKS AT INTERFACES
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[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 543 - 576

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