OBSERVATION OF ORIENTATION DEPENDENCE OF INTERFACE DIPOLE ENERGIES IN GE-GAAS

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[3] ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 999 - 1005

[4] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240

[5] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 655 - 662

[6] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2841 - 2843

[7] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &

[8] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2642 - 2652

[9] ELEMENTARY THEORY OF HETEROJUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021

[10] Kroemer H., 1975, Critical Reviews in Solid State Sciences, V5, P555, DOI 10.1080/10408437508243512

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[3] ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 999 - 1005

[4] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 237 - 240

[5] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 655 - 662

[6] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2841 - 2843

[7] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &

[8] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2642 - 2652

[9] ELEMENTARY THEORY OF HETEROJUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021

[10] Kroemer H., 1975, Critical Reviews in Solid State Sciences, V5, P555, DOI 10.1080/10408437508243512