TRANSMISSION ELECTRON MICROSCOPE STUDY OF GALLIUM ARSENIDE

[1] ABRAHAMS MS, 1959, PROPERTIES ELEMENTAL, P225

[2] PRECIPITATES IN GALLIUM ARSENIDE SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) : 1016 - &

[3] FAUST JW, 1962, COMPOUND SEMICONDUCT, P445

[4] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) : 880 - 880

[5] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[6] GATOS HC, 1961, J ELECTROCHEM SOC, V108, P646

[7] GATOS HC, 1959, PROPERTIES ELEMEN ED, P225

[8] HONJO G, 1963, MAY P C SINGL FILMS

[9] MEIERAN ES, 1963, T AIME, V227, P284

[10] DIRECT OBSERVATION OF IMPERFECTIONS IN SEMICONDUCTOR CRYSTALS BY ANOMALOUS TRANSMISSION OF X RAYS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2760 - &

[1] ABRAHAMS MS, 1959, PROPERTIES ELEMENTAL, P225

[2] PRECIPITATES IN GALLIUM ARSENIDE SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) : 1016 - &

[3] FAUST JW, 1962, COMPOUND SEMICONDUCT, P445

[4] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) : 880 - 880

[5] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[6] GATOS HC, 1961, J ELECTROCHEM SOC, V108, P646

[7] GATOS HC, 1959, PROPERTIES ELEMEN ED, P225

[8] HONJO G, 1963, MAY P C SINGL FILMS

[9] MEIERAN ES, 1963, T AIME, V227, P284

[10] DIRECT OBSERVATION OF IMPERFECTIONS IN SEMICONDUCTOR CRYSTALS BY ANOMALOUS TRANSMISSION OF X RAYS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2760 - &