MICROINHOMOGENEITIES OF DONOR AND ACCEPTOR DISTRIBUTIONS IN N-TYPE LEC-GAAS FROM FREE-CARRIER INFRARED-ABSORPTION

被引：6

作者：

WRUCK, D ^{[1
]}

SEIFERT, M ^{[1
]}

ULRICI, W ^{[1
]}

机构：

[1] VEB MIKROELEKTR KARL LIEBKNECHT,DDR-1533 STAHNSDORF,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 86卷 / 02期

关键词：

ACCEPTORS - DONORS - FREE CARRIERS - MICROELECTRONIC DEVICES - MICROINHOMOGENEITIES;

D O I：

10.1002/pssa.2210860228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：691 / 702

页数：12

共 18 条

[1] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].

BURTON, JA ;

PRIM, RC ;

SLICHTER, WP .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991

[2] ACCEPTOR BEHAVIOUR OF GERMANIUM IN GALLIUM ARSENIDE [J].

CONSTANT.C ;

PETRESCU.I .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) :2397-&

[3] THE BEHAVIOUR OF SOME IMPURITIES IN III-V COMPOUNDS [J].

EDMOND, JT .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472) :622-627

[4]

GLEDHILL GA, 1984, J PHYS C, V17, P2301

[5] DETERMINATION OF CARRIER CONCENTRATION AND COMPENSATION MICROPROFILES IN GAAS [J].

JASTRZEBSKI, L ;

LAGOWSKI, J ;

WALUKIEWICZ, W ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2301-2303

[6] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

LAGOWSKI, J ;

GATOS, HC ;

PARSEY, JM ;

WADA, K ;

KAMINSKA, M ;

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344

[7]

MILVIDSKII MG, 1967, INORG MATER, V3, P1024

[8] BEHAVIOR OF BORON IMPURITIES IN N-TYPE GALLIUM-ARSENIDE AND GALLIUM-PHOSPHIDE [J].

MORRISON, SR ;

NEWMAN, RC ;

THOMPSON, F .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03) :633-644

[9]

PALIK ED, 1980, NONDESTRUCTIVE EVALU, P315

[10]

Shaw D, 2012, ATOMIC DIFFUSION SEM

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