INTEGRATED PICOSECOND PHOTOCONDUCTORS PRODUCED ON BULK SI SUBSTRATES

被引：7

作者：

HAMMOND, RB ^{[1
]}

PAULTER, NG ^{[1
]}

WAGNER, RS ^{[1
]}

EISENSTADT, WR ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：404 / 405

页数：2

共 10 条

[1] PICOSECOND OPTICAL ELECTRONIC SAMPLING - CHARACTERIZATION OF HIGH-SPEED PHOTODETECTORS
AUSTON, DH
SMITH, PR
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 599 - 601
[2] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON
AUSTON, DH
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 101 - 103
[3] PICOSECOND PHOTORESPONSE IN HE-3(+) BOMBARDED INP PHOTOCONDUCTORS
DOWNEY, PM
SCHWARTZ, B
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 207 - 209
[4] PRACTICAL COMPARISON OF OPTOELECTRONIC SAMPLING SYSTEMS AND DEVICES
EVERARD, JKA
CARROLL, JE
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (01): : 5 - 16
[5] OBSERVED CIRCUIT LIMITS TO TIME RESOLUTION IN CORRELATION-MEASUREMENTS WITH SI-ON-SAPPHIRE, GAAS, AND INP PICOSECOND PHOTOCONDUCTORS
HAMMOND, RB
PAULTER, NG
WAGNER, RS
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 289 - 291
[6] 10PS OPTOELECTRONIC SAMPLING SYSTEM
LOW, AJ
CARROLL, JE
[J]. IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (06): : 185 - 190
[7] MICROWAVE SWITCHING PERFORMANCE OF HIGH-SPEED OPTOELECTRONIC SWITCHES - AN EFFICIENCY COMPARISON OF THE BASIC TYPES
PLATTE, W
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (06): : 193 - 196
[8] PICOSECOND PHOTOCONDUCTIVITY IN RADIATION-DAMAGED SILICON-ON-SAPPHIRE FILMS
SMITH, PR
AUSTON, DH
JOHNSON, AM
AUGUSTYNIAK, WM
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 47 - 50
[9] MEASUREMENT OF GAAS FIELD-EFFECT TRANSISTOR ELECTRONIC IMPULSE-RESPONSE BY PICOSECOND OPTICAL ELECTRONICS
SMITH, PR
AUSTON, DH
AUGUSTYNIAK, WM
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 739 - 741
[10] PICOSECOND ELECTROOPTIC SAMPLING SYSTEM
VALDMANIS, JA
MOUROU, G
GABEL, CW
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 211 - 212

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