PRACTICAL COMPARISON OF OPTOELECTRONIC SAMPLING SYSTEMS AND DEVICES

被引：10

作者：

EVERARD, JKA ^{[1
]}

CARROLL, JE ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,ENGLAND

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1983年 / 130卷 / 01期

关键词：

D O I：

10.1049/ip-i-1.1983.0003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：5 / 16

页数：12

共 56 条

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[2]

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[3]

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BEAN, JC .

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[7] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

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APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[8] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J].

AUSTON, DH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :101-103

[9]

BAHL IJ, 1977, MICROWAVES, V16, P174

[10] ELECTRICAL-PROPERTIES OF COPLANAR TRANSMISSION-LINES ON LOSSLESS AND LOSSY SUBSTRATES [J].

BECKER, JP ;

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ELECTRONICS LETTERS, 1979, 15 (03) :88-90

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