THE INTERSECTING KIKUCHI LINE TECHNIQUE - CRITICAL VOLTAGE AT ANY VOLTAGE

被引：21

作者：

TAFTO, J ^{[1
]}

GJONNES, J ^{[1
]}

机构：

[1] UNIV OSLO,DEPT PHYS,OSLO 3,NORWAY

来源：

ULTRAMICROSCOPY | 1985年 / 17卷 / 04期

关键词：

CRYSTALS - Structure - SILICON CARBIDE;

D O I：

10.1016/0304-3991(85)90199-8

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The close relationship between the critical voltage and the intersecting Kikuchi line technique, two electron diffraction techniques for the accurate determination of structure factor values, is demonstrated by analytical treatment of simple diffraction conditions involving three beams. As an example the value of the 220 structure factor of cubic SiC is determined from convergent-beam electron diffraction using 100 kev electrons.

引用

收藏

页码：329 / 334

页数：6

相关论文

共 10 条

[1] APPLICATION OF NON-SYSTEMATIC MANY-BEAM DYNAMIC EFFECTS TO STRUCTURE-FACTOR DETERMINATION [J].

GJONNES, J ;

HOIER, R .

ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1971, A 27 (JUL1) :313-&

[2]

HIGGS A, 1981, 39TH P ANN EMSA M AT, P346

[3]

Howie A., 1970, Modern diffraction and imaging techniques in material science, P295

[4]

IBERS J, 1974, INT TABLES XRAY CRYS, V4, P152

[5] QUANTITATIVE-ANALYSIS OF CBED TO DETERMINE POLARITY AND IONICITY OF ZNS-TYPE CRYSTALS [J].

ISHIZUKA, K ;

TAFTO, J .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1984, 40 (AUG) :332-337

[6] CRITICAL VOLTAGE EFFECT IN HIGH-VOLTAGE ELECTRON-MICROSCOPY [J].

LALLY, JS ;

HUMPHREYS, CJ ;

METHERELL, AJ ;

FISHER, RM .

PHILOSOPHICAL MAGAZINE, 1972, 25 (02) :321-+

[7]

REIMER L, 1984, TRANSMISSION ELECTRO, P302

[8] DETERMINATION OF CRYSTAL-STRUCTURE FACTORS OF SI BY THE INTERSECTING-KIKUCHI-LINE METHOD [J].

TERASAKI, O ;

WATANABE, D ;

GJONNES, J .

ACTA CRYSTALLOGRAPHICA SECTION A, 1979, 35 (NOV) :895-900

[9] AN APPARENT VARIATION OF STRUCTURE FACTORS FOR ELECTRONS WITH ACCELERATING VOLTAGE . AN OBSERVATION THROUGH KIKUCHI PATTERNS [J].

WATANABE, D ;

UYEDA, R ;

KOGISO, M .

ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1968, A 24 :249-&

[10] A NEW METHOD OF DETERMINING ATOM FORM FACTOR BY HIGH VOLTAGE ELECTRON DIFFRACTION . AN APPLICATION OF EFFECT OF VANISHING SECOND ORDER REFLEXION [J].

WATANABE, D ;

UYEDA, R .

ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1968, A 24 :580-&