THE DESORPTION BEHAVIOR OF IMPLANTED NOBLE-GASES AT LOW-ENERGY ON SILICON SURFACES

被引：9

作者：

HOLTSLAG, AHM

VANSILFHOUT, A

机构：

来源：

SURFACE SCIENCE | 1987年 / 187卷 / 01期

关键词：

D O I：

10.1016/S0039-6028(87)80120-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：36 / 57

页数：22

共 21 条

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