MICROHARDNESS OF CUINSE2

被引:17
作者
CONSTANTINIDIS, G [1 ]
TOMLINSON, RD [1 ]
NEUMANN, H [1 ]
机构
[1] KARL MARX UNIV,SEKT PHYS,DDR-7010 LEIPZIG,GER DEM REP
关键词
SEMICONDUCTOR MATERIALS - Anisotropy;
D O I
10.1080/09500838808229616
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vickers microhardness measurements have been performed on (112) faces of n- and p-type CuInSe//2 single crystals at room temperature. In nearly stoichiometric samples, hardness values of 2. 33 plus or minus 0. 06 GPa and 3. 37 plus or minus 0. 09 GPa were found for n- and p-type material respectively. Preliminary results regarding hardness anisotropy and microhardness changes due to larger deviations from stoichiometry are given. At applied loads in the range 5-500 g no dependence of the microhardness on the load was found.
引用
收藏
页码:91 / 97
页数:7
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