MICROHARDNESS OF CARBON-DOPED (111) P-TYPE CZOCHRALSKI SILICON

被引：14

作者：

DANYLUK, S ^{[1
]}

LIM, DS ^{[1
]}

KALEJS, J ^{[1
]}

机构：

[1] MOBIL SOLAR ENERGY CORP,WALTHAM,MA

来源：

关键词：

D O I：

10.1007/BF00720435

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1135 / 1137

页数：3

共 9 条

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[4] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON
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[J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 53 - 55
[5] STATISTICAL THEORIES OF SOLID-SOLUTION HARDENING
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[J]. ACTA METALLURGICA, 1972, 20 (07): : 917 - &
[6] MCCLINTOCK FA, 1966, MECHANICAL BEHAVIOR, P453
[7] NEUBERGER MS, 1971, HDB ELECTRONIC MATER, V5
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[9] Trefilov VI, 1964, SOV PHYS DOKL, V8, P1240