ANNEALING OF SCRATCHES ON NEAR (111) SILICON SLICES

被引:9
作者
BADRICK, AST
PUTTICK, KE
ELDEGHAIDY, FHA
机构
[1] Department of Physics, University of Surrey
关键词
D O I
10.1088/0022-3727/12/6/014
中图分类号
O59 [应用物理学];
学科分类号
摘要
Scratches on near (111) silicon surfaces in (112) and (110), annealed in the temperature regime 900-1200 degrees C in pure argon, have been examined by Lang Topography. As reported previously the pre-anneal strain field around scratches on near (111) silicon surfaces is consistent with the field of compressive stresses around abrasions on diamond faces as proposed by Frank, Lawn, Lang and Wilks in 1967. On near (111) silicon surfaces this strain field is relaxed on annealing by dislocation glide on (111). By simulating the stress field of Frank et al. (1967) with a group of like-signed edge dislocations with their corresponding images, the strain relaxation process has been examined. Experimental results are found to be in good agreement with the theoretical model proposed within the band of activation energy 0.80 ev<or=U<or=1.28 eV.
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页码:909 / &
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