DISORDER EFFECTS ON DEEP TRAPPING IN AMORPHOUS-SEMICONDUCTORS

被引：124

作者：

STREET, RA

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1984年 / 49卷 / 01期

关键词：

D O I：

10.1080/13642818408246494

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L15 / L20

页数：6

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