ELECTRON-HOLE RECOMBINATION AT THE SI-SIO2 INTERFACE

[1] ELECTRICAL CHARACTERISTICS OF SIO2-SI INTERFACE NEAR MIDGAP AND IN WEAK INVERSION [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 641 - 654

[2] IMPROVEMENTS IN THE DETERMINATION OF INTERFACE STATE DENSITY USING DEEP LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1744 - 1751

[3] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[4] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[5] GROVE AS, 1967, PHYS TECHNOL S, P301

[6] THE BASE CURRENT RECOMBINING AT THE OXIDIZED SILICON SURFACE [J]. SOLID-STATE ELECTRONICS, 1983, 26 (05) : 453 - 463

[7] MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 303 - 314

[8] KRALL NA, 1973, PRINCIPLES PLASMA PH, P65

[9] BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1014 - 1018

[10] Many A., 1965, SEMICONDUCTOR SURFAC

[1] ELECTRICAL CHARACTERISTICS OF SIO2-SI INTERFACE NEAR MIDGAP AND IN WEAK INVERSION [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 641 - 654

[2] IMPROVEMENTS IN THE DETERMINATION OF INTERFACE STATE DENSITY USING DEEP LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1744 - 1751

[3] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[4] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[5] GROVE AS, 1967, PHYS TECHNOL S, P301

[6] THE BASE CURRENT RECOMBINING AT THE OXIDIZED SILICON SURFACE [J]. SOLID-STATE ELECTRONICS, 1983, 26 (05) : 453 - 463

[7] MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 303 - 314

[8] KRALL NA, 1973, PRINCIPLES PLASMA PH, P65

[9] BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1014 - 1018

[10] Many A., 1965, SEMICONDUCTOR SURFAC