VLSI TECHNOLOGY AND DIELECTRIC FILM SCIENCE

[1] CHU WK, 1978, BACKSCATTERING SPECT, P243

[2] DAVIS JR, 1981, INSTABILITIES MOS DE

[3] DIRECT OBSERVATION OF THE THRESHOLD FOR ELECTRON HEATING IN SILICON DIOXIDE [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (12) : 1284 - 1286

[4] FEIGL FJ, 1983, MATERIALS PROCESS CH, V6, P147

[5] THEORY OF HIGH-FIELD ELECTRON-TRANSPORT IN SILICON DIOXIDE [J]. PHYSICAL REVIEW B, 1985, 31 (12) : 8124 - 8142

[6] THE PHILLIPS,J.C. MODEL FOR VITREOUS SIO2 - A CRITICAL-APPRAISAL [J]. SOLID STATE COMMUNICATIONS, 1986, 57 (08) : 677 - 682

[7] GRUNTHANER PJ, 1979, PHYS REV LETT, V43, P1638

[8] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 93 - 95

[9] KRIVANEK OL, 1978, PHYSICS SIO2 ITS INT, P356

[10] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[1] CHU WK, 1978, BACKSCATTERING SPECT, P243

[2] DAVIS JR, 1981, INSTABILITIES MOS DE

[3] DIRECT OBSERVATION OF THE THRESHOLD FOR ELECTRON HEATING IN SILICON DIOXIDE [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (12) : 1284 - 1286

[4] FEIGL FJ, 1983, MATERIALS PROCESS CH, V6, P147

[5] THEORY OF HIGH-FIELD ELECTRON-TRANSPORT IN SILICON DIOXIDE [J]. PHYSICAL REVIEW B, 1985, 31 (12) : 8124 - 8142

[6] THE PHILLIPS,J.C. MODEL FOR VITREOUS SIO2 - A CRITICAL-APPRAISAL [J]. SOLID STATE COMMUNICATIONS, 1986, 57 (08) : 677 - 682

[7] GRUNTHANER PJ, 1979, PHYS REV LETT, V43, P1638

[8] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 93 - 95

[9] KRIVANEK OL, 1978, PHYSICS SIO2 ITS INT, P356

[10] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO