COMPLEMENTARY METAL-OXIDE-SILICON FIELD-EFFECT TRANSISTORS FABRICATED IN 4-MEV BORON-IMPLANTED SILICON

被引：13

作者：

TERRILL, KW

BYRNE, PF

HU, C

CHEUNG, NW

机构：

来源：

关键词：

D O I：

10.1063/1.95470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：977 / 979

页数：3

共 6 条

BYRNE, PF ;

CHEUNG, NW ;

SADANA, DK .

[2] LATCH-UP IN CMOS INTEGRATED-CIRCUITS [J].

GREGORY, BL ;

SHAFER, BD .

[3]

Huang C. C., 1982, International Electron Devices Meeting. Technical Digest, P454

[4]

Jerdonek R., 1982, International Electron Devices Meeting. Technical Digest, P450

[5]

SAIHALASZ GA, 1982, IEEE T, P725

[6]

Yaney D. S., 1981, International Electron Devices Meeting, P236