NON-PARABOLICITY AND TRANSVERSE MASS OF ELECTRON CARRIERS IN SILICON

被引：10

作者：

FALICOV, LM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 18卷 / 05期

关键词：

D O I：

10.1016/0038-1098(76)91508-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：669 / 671

页数：3

共 22 条

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