HOLE CYCLOTRON MASSES IN SILICON MOS DEVICES

被引：10

作者：

FALICOV, LM ^{[1
]}

GARCIA, N ^{[1
]}

机构：

[1] UNIV CALIF,DEPT PHYS,BERKELEY,CA 94720

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 17卷 / 04期

关键词：

D O I：

10.1016/0038-1098(75)90480-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：473 / 475

页数：3

共 8 条

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[2] VARIATION WITH FERMI LEVEL OF HOLE CYCLOTRON MASSES IN SILICON AND GERMANIUM [J].

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[6] QUANTUM EFFECTS IN GE AND SI .1. [J].

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[7]

von Klitzing K., 1974, Solid State Communications, V15, P489, DOI 10.1016/0038-1098(74)91126-0

[8]

VONKLITZING K, 1974, SOL ST COMM, V14, P38

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