WAVE-GUIDE INFRARED PHOTODETECTORS ON A SILICON CHIP

[1] BEAN JC, 1985, MATER RES SOC S P, V37, P245

[2] HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS [J]. ELECTRONICS LETTERS, 1983, 19 (20) : 818 - 820

[3] LOW-DARK-CURRENT LOW-VOLTAGE 1.3-1.6 MU-M AVALANCHE PHOTODIODE WITH HIGH-LOW ELECTRIC-FIELD PROFILE AND SEPARATE ABSORPTION AND MULTIPLICATION REGIONS BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1984, 20 (15) : 635 - 637

[4] CAPASSO F, 1985, SEMICONDUCTOR SEMIME

[5] CASEY HC, 1978, HETEROSTRUCTURE LA A, P54

[6] HULL R, UNPUB STABILITY SEMI

[7] KASTALSKY A, 1985, 1ST P INT S SIL MBE, P406

[8] MEASUREMENT OF THE BAND-GAP OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1333 - 1335

[9] NEW INFRARED DETECTOR ON A SILICON CHIP [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1135 - 1139

[10] PEARSALL TP, UNPUB AVALANCHE GAIN

[1] BEAN JC, 1985, MATER RES SOC S P, V37, P245

[2] HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS [J]. ELECTRONICS LETTERS, 1983, 19 (20) : 818 - 820

[3] LOW-DARK-CURRENT LOW-VOLTAGE 1.3-1.6 MU-M AVALANCHE PHOTODIODE WITH HIGH-LOW ELECTRIC-FIELD PROFILE AND SEPARATE ABSORPTION AND MULTIPLICATION REGIONS BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1984, 20 (15) : 635 - 637

[4] CAPASSO F, 1985, SEMICONDUCTOR SEMIME

[5] CASEY HC, 1978, HETEROSTRUCTURE LA A, P54

[6] HULL R, UNPUB STABILITY SEMI

[7] KASTALSKY A, 1985, 1ST P INT S SIL MBE, P406

[8] MEASUREMENT OF THE BAND-GAP OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1333 - 1335

[9] NEW INFRARED DETECTOR ON A SILICON CHIP [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1135 - 1139

[10] PEARSALL TP, UNPUB AVALANCHE GAIN