X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF TITANIUM NITRIDE BARRIER METALS PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引:6
作者
CHANG, YH [1 ]
WON, SJ [1 ]
OH, JE [1 ]
PAEK, SH [1 ]
LEE, HD [1 ]
CHOI, JS [1 ]
LEE, SI [1 ]
AHN, ST [1 ]
LEE, JG [1 ]
机构
[1] HAN YANG UNIV,DEPT MAT ENGN,SEOUL,SOUTH KOREA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 7B期
关键词
TITANIUM NITRIDE; BARRIER METALS; XPS; CARBON IMPURITY;
D O I
10.1143/JJAP.34.L907
中图分类号
O59 [应用物理学];
学科分类号
摘要
Titanium nitride (TiN) films prepared by means of low-pressure metalorganic chemical vapor deposition (LP-MOCVD) with the tetrakis-dimethyl-amino titanium (TDMAT) and ammonia, attempting for producing conformal barrier metals for ultra-large scale integrated devices, are studied by means of X-ray photoelectron spectroscopy (XPS) in conjunction with Ar ion bombardment. In the detailed analysis of XPS spectra of the C 1 s region composed of two peaks corresponding to the chemical bondings of hydrocarbon and Ti-C, it is found that the relative intensity ratio between two peaks can be a direct measure of film properties, and that the chemical bonding of hydrocarbon dominates as the film thickness increases and the deposition temperature decreases.
引用
收藏
页码:L907 / L910
页数:4
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