CHARACTERIZATION OF CVD-TIN FILMS PREPARED WITH METALORGANIC SOURCE

被引：56

作者：

ISHIHARA, K ^{[1
]}

YAMAZAKI, K ^{[1
]}

HAMADA, H ^{[1
]}

KAMISAKO, K ^{[1
]}

TARUI, Y ^{[1
]}

机构：

[1] TOKYO UNIV AGR & TECHNOL,FAC TECHNOL,DIV ELECTR & INFORMAT ENGN,KOGANEI,TOKYO 184,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期

关键词：

Iocvd; Resistivity; Sem; Tin; X-ray diffraction; Xps;

D O I：

10.1143/JJAP.29.2103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper investigates the structural and electrical properties of TiN films prepared by metalorganic chemical vapor deposition (MOCVD) using a mixture of tetradimethylamino-titanium (Ti(N(CH3)2)4) and NH3gases. The deposited films changed from a metallic gray to a gold color at a substrate temperature of 300∼580°C. The film resistivity decreases with increasing substrate temperature to 8.4×102µΩ·cm at 580°C. The preferred orientation was (111) at temperatures over 400°C. © 1990 IOP Publishing Ltd.

引用

页码：2103 / 2105

页数：3

共 12 条

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