PRESSURE-INDUCED SEMICONDUCTOR-METAL TRANSITIONS IN AMORPHOUS INSB

被引:32
作者
SHIMOMURA, O [1 ]
ASAUMI, K [1 ]
SAKAI, N [1 ]
MINOMURA, S [1 ]
机构
[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 113,JAPAN
来源
PHILOSOPHICAL MAGAZINE | 1976年 / 34卷 / 05期
关键词
D O I
10.1080/14786437608222054
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:839 / 849
页数:11
相关论文
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