ACTIVATED TRANSPORT IN AMORPHOUS-SEMICONDUCTORS .2. INTERPRETATION OF EXPERIMENTAL-DATA

被引：28

作者：

FENZ, P ^{[1
]}

MULLER, H ^{[1
]}

OVERHOF, H ^{[1
]}

THOMAS, P ^{[1
]}

机构：

[1] UNIV PADERBORN,FACHBEREICH PHYS,PADERBORN,FED REP GER

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 16期

关键词：

D O I：

10.1088/0022-3719/18/16/014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3191 / 3199

页数：9

共 28 条

[1] THEORY OF THE TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF GERMANIUM [J].

ALLEN, PB ;

CARDONA, M .

PHYSICAL REVIEW B, 1981, 23 (04) :1495-1505

[2]

ALLEN PB, 1982, PHYS REV B, V24, P7479

[3]

ANDERSON DA, 1982, PHILOS MAG B, V45, P1, DOI 10.1080/01418618208243899

[4] TRANSPORT PROPERTIES OF DOPED AMORPHOUS SILICON [J].

BEYER, W ;

OVERHOF, H .

SOLID STATE COMMUNICATIONS, 1979, 31 (01) :1-4

[5] TRANSPORT IN LITHIUM-DOPED AMORPHOUS SILICON [J].

BEYER, W ;

FISCHER, R ;

OVERHOF, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (03) :205-217

[6] THE EFFECT OF TEMPERATURE-DEPENDENT ENERGIES ON SEMICONDUCTOR THERMOPOWER FORMULAS [J].

BUTCHER, PN .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (01) :L5-L8

[7] EFFECT OF TEMPERATURE-DEPENDENT ENERGY-LEVELS IN BOLTZMANN TRANSPORT-THEORY [J].

BUTCHER, PN ;

FRIEDMAN, L .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (19) :3803-3809

[8]

COHEN MH, 1983, PHYS REV LETT, V51, P1205

[9] CONDUCTIVITY, THERMOPOWER, AND STATISTICAL SHIFT IN AMORPHOUS-SEMICONDUCTORS [J].

DOHLER, GH .

PHYSICAL REVIEW B, 1979, 19 (04) :2083-2091

[10]

Economou E. N., 1983, Green's Functions in Quantum Physics

← 1 2 3 →