1.3 MU-M INP-INGAASP PLANAR AVALANCHE PHOTO-DIODES

被引:11
作者
SHIRAI, T
OSAKA, F
YAMASAKI, S
NAKAJIMA, K
KANEDA, T
机构
关键词
D O I
10.1049/el:19810575
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:826 / 827
页数:2
相关论文
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    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 807 - 810
  • [2] INP-INGAASP AVALANCHE PHOTO-DIODES WITH NEW GUARD RING STRUCTURE
    OSAKA, F
    NAKAZIMA, K
    KANEDA, T
    SAKURAI, T
    [J]. ELECTRONICS LETTERS, 1980, 16 (18) : 716 - 716
  • [3] SUSA N, 1980, IEEE J QUANTUM ELECT, V16, P868