ANALYSIS OF THE DARK CURRENT IN DOPED-WELL MULTIPLE QUANTUM WELL ALGAAS INFRARED PHOTODETECTORS

被引：58

作者：

PELVE, E ^{[1
]}

BELTRAM, F ^{[1
]}

BETHEA, CG ^{[1
]}

LEVINE, BF ^{[1
]}

SHEN, VO ^{[1
]}

HSIEH, SJ ^{[1
]}

ABBOTT, RR ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5656 / 5658

页数：3

共 8 条

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[2] BROAD-BAND 8-12-MU-M HIGH-SENSITIVITY GAAS QUANTUM WELL INFRARED PHOTODETECTOR [J].

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[3] BOUND-TO-EXTENDED STATE ABSORPTION GAAS SUPERLATTICE TRANSPORT INFRARED DETECTORS [J].

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MALIK, RJ .

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[4] HIGH-DETECTIVITY D-STAR = 1.0X1010 CM SQUARE-ROOT-HZ/W GAAS ALGAAS MULTIQUANTUM WELL LAMBDA = 8.3 MU-M INFRARED DETECTOR [J].

LEVINE, BF ;

BETHEA, CG ;

HASNAIN, G ;

WALKER, J ;

MALIK, RJ .

APPLIED PHYSICS LETTERS, 1988, 53 (04) :296-298

[5] BARRIER HEIGHT IN INDIRECT BANDGAP ALGAAS/GAAS HETERO-JUNCTION DETERMINED WITH N-SEMICONDUCTOR INSULATOR SEMICONDUCTOR DIODES [J].

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MIZUTANI, T ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (07) :L557-L559

[6]

MESHKOV SV, 1986, ZH EKSP TEOR FIZ+, V91, P2252

[7] BAND NONPARABOLICITY EFFECTS IN SEMICONDUCTOR QUANTUM-WELLS [J].

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PHYSICAL REVIEW B, 1987, 35 (14) :7770-7773

[8]

SZE SM, 1981, PHYSICS SEMICONDUCTO, pCH5

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