NATURAL LINEWIDTH OF SEMICONDUCTOR-LASERS

被引:17
作者
ARNAUD, J
机构
[1] Equipe de Microoptoelectronique de Montpellier, Unitee Associee au CNRS, USTL, 34060 Montpellier Cedex, France
关键词
D O I
10.1049/el:19860367
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A formula is given for the natural linewidth of high-gain lasers, which is applicable to arbitrary three-dimensional geometries. This formula agrees with Petermann's result for lasers with transversely inhomogeneous gains (K-factor) and with previous results for the effect of small mirror reflectivities. It does not agree with the Schawlow-Townes (ST) formula used in evaluating the alpha equals DELTA n//r/ DELTA n//i factor of conventional semiconductor lasers. The difference between the two formulas is significant when the mirror power reflectivity is less than about 0. 6. The modified formula gives directly the linewidth of lasers coupled to long external cavities. Saturation effects, however, are neglected.
引用
收藏
页码:538 / 540
页数:3
相关论文
共 10 条
[1]   ROLE OF PETERMANN K-FACTOR IN SEMICONDUCTOR-LASER OSCILLATORS [J].
ARNAUD, J .
ELECTRONICS LETTERS, 1985, 21 (12) :538-539
[2]  
FAVRE F, 1982, IEEE J QUANTUM ELECT, V18, P1712, DOI 10.1109/TMTT.1982.1131311
[3]  
Fleck Jr J.A., 1963, J APPL PHYS, V34, P2997
[4]   THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].
HENRY, CH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :259-264
[5]  
LANDAU LD, 1963, ELECTRODYNAMICS CONT, P361
[6]  
LEE TP, 1985, INT OP OPTICAL COMMU
[7]   CALCULATED SPONTANEOUS EMISSION FACTOR FOR DOUBLE-HETEROSTRUCTURE INJECTION-LASERS WITH GAIN-INDUCED WAVEGUIDING [J].
PETERMANN, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) :566-570
[8]  
THOMSON GHB, 1980, PHYSICS SEMICONDUCTO, P120
[9]   PHASE NOISE IN A LASER WITH OUTPUT COUPLING [J].
UJIHARA, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) :814-818
[10]  
YARIV A, 1975, QUANTUM ELECTRONICS