TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE DAMAGE PRODUCED IN INDIVIDUAL DISPLACEMENT CASCADES IN GAAS AND GAP

被引：42

作者：

BENCH, MW ^{[1
]}

ROBERTSON, IM ^{[1
]}

KIRK, MA ^{[1
]}

机构：

[1] ARGONNE NATL LAB,DIV MAT SCI,ARGONNE,IL 60439

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷

关键词：

D O I：

10.1016/0168-583X(91)95240-E

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The crystalline-to-amorphous transition induced by ion implantation has been investigated in GaAs and GaP using transmission electron microscopy, including experiments performed in situ and with, high-resolution TEM. Implantations have been made with Ar+, Kr+, Xe+, and Au+ ions (energy 50 or 80 kV) at 30 and 300 K. The high-resolution experiments have confirmed the amorphous nature of the damage produced in individual displacement cascades. The in situ experiments at 30 K have shown that amorphous zones are produced within isolated cascades with high probability. This probability decreases for room-temperature implantations of GaAs but remains the same for GaP. Annealing experiments in the 30-300 K range have shown that there is significant damage recovery below 300 K in GaAs but none in GaP. The experimental results are discussed in terms of the deposited energy density within the cascade, which has been determined through Monte Carlo simulations developed from TRIM.

引用

页码：372 / 376

页数：5

共 13 条

[1]

BENCH MW, IN PRESS

[2]

BENCH MW, 1988, MATER RES SOC S P, V100, P293

[3] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[4]

CHANDLER TJ, 1983, I PHYS C SER, V67, P227

[5] INSITU IMPLANTATION SYSTEM IN ARGONNE-NATIONAL-LABORATORY HVEM-TANDEM FACILITY [J].

TAYLOR, A ;

WALLACE, JR ;

RYAN, EA ;

PHILIPPIDES, A ;

WROBEL, JR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 189 (01) :211-217

[6] ENERGY SPIKES IN SI AND GE DUE TO HEAVY-ION BOMBARDMENT [J].

THOMPSON, DA ;

WALKER, RS .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2) :91-100

[7] HIGH-DENSITY CASCADE EFFECTS [J].

THOMPSON, DA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1981, 56 (3-4) :105-150

[8] ANNEALING STUDIES OF ION-IMPLANTED GAAS IN THE 40-300-K RANGE [J].

TOGNETTI, NP ;

CARTER, G ;

STEVANOVIC, DV ;

THOMPSON, DA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 66 (1-2) :15-20

[9] INSITU STUDIES OF ION IRRADIATION EFFECTS IN AN ELECTRON-MICROSCOPE [J].

VETRANO, JS ;

BENCH, MW ;

ROBERTSON, IM ;

KIRK, MA .

METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1989, 20 (12) :2673-2680

[10] COMPUTER-SIMULATION OF ION-BOMBARDMENT COLLISION CASCADES [J].

WALKER, RS ;

THOMPSON, DA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2) :113-120

← 1 2 →