ANNEALING STUDIES OF ION-IMPLANTED GAAS IN THE 40-300-K RANGE

被引：20

作者：

TOGNETTI, NP

CARTER, G

STEVANOVIC, DV

THOMPSON, DA

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCS,ENGLAND

[2] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4M1,ONTARIO,CANADA

[3] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1982年 / 66卷 / 1-2期

关键词：

Compendex;

D O I：

10.1080/00337578208211470

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

SEMICONDUCTING GALLIUM COMPOUNDS

引用

页码：15 / 20

页数：6

共 13 条

[1] AHMED NAG, 1980, RAD EFF, V52, P225
[2] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS
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[3] ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS
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SADANA, DK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4038 - 4046
[4] ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS
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[J]. SOLID-STATE ELECTRONICS, 1980, 23 (08) : 831 - &
[5] ELECTRICAL STUDIES OF LOW-TEMPERATURE NEUTRON- AND ELECTRON-IRRADIATED EPITAXIAL NORMAL-TYPE GAAS
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[6] ENERGY SPIKES IN SI AND GE DUE TO HEAVY-ION BOMBARDMENT
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2): : 91 - 100
[7] EVIDENCE FOR SPIKE-EFFECTS IN LOW-ENERGY HEAVY-ION BOMBARDMENT OF SI AND GE
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 32 (3-4): : 135 - 142
[8] DISORDER PRODUCTION AND AMORPHIZATION IN ION-IMPLANTED SILICON
THOMPSON, DA
GOLANSKI, A
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STEVANOVIC, DV
CARTER, G
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (1-2): : 69 - 84
[9] DEPTH DISTRIBUTION OF DISORDER PRODUCED BY ROOM-TEMPERATURE 40 KEV N+ ION IRRADIATION OF SILICON
TITOV, AI
CHRISTODOULIDES, CE
CARTER, G
NOBES, MJ
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 41 (02): : 107 - 111
[10] AN ALTERNATIVE METHOD FOR THE DECHANNELLING CORRECTION IN CHANNELLING-BACKSCATTERING EXPERIMENTS
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[J]. RADIATION EFFECTS LETTERS, 1981, 58 (05): : 151 - 156

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