DISORDER PRODUCTION AND AMORPHIZATION IN ION-IMPLANTED SILICON

[1] EVIDENCE FOR SPIKE-EFFECTS IN LOW-ENERGY AR ION-BOMBARDMENT OF SI AT ROOM-TEMPERATURE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 38 (3-4): : 221 - 229

[2] DEPTH DISTRIBUTION OF DISORDER PRODUCED BY ROOM-TEMPERATURE 30-KEV AR+ AND CL+ ION IRRADIATION OF SILICON [J]. PHYSICS LETTERS A, 1979, 69 (06) : 431 - 435

[3] Baranova E. C., 1973, Radiation Effects, V18, P21, DOI 10.1080/00337577308234712

[4] ACCUMULATION OF AMORPHOUSNESS AS A FUNCTION OF IRRADIATION FLUENCE IN A COMPOSITE MODEL OF DISORDER PRODUCTION [J]. RADIATION EFFECTS LETTERS, 1979, 43 (01): : 19 - 24

[5] Carter G., 1976, ION IMPLANTATION SEM

[6] DETERMINATION OF HIGH-DOSE IMPLANTATION PROFILES USING LOW-ANGLE RUTHERFORD BACKSCATTERING [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 219 - 224

[7] RUTHERFORD BACKSCATTERING ANALYSIS OF ION-IMPLANTED, THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) : 1651 - 1653

[8] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1119 - 1127

[9] EISEN FH, 1970, P EUROPEAN C ION IMP

[10] EISEN FH, 1973, CHANNELING, P415

[1] EVIDENCE FOR SPIKE-EFFECTS IN LOW-ENERGY AR ION-BOMBARDMENT OF SI AT ROOM-TEMPERATURE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 38 (3-4): : 221 - 229

[2] DEPTH DISTRIBUTION OF DISORDER PRODUCED BY ROOM-TEMPERATURE 30-KEV AR+ AND CL+ ION IRRADIATION OF SILICON [J]. PHYSICS LETTERS A, 1979, 69 (06) : 431 - 435

[3] Baranova E. C., 1973, Radiation Effects, V18, P21, DOI 10.1080/00337577308234712

[4] ACCUMULATION OF AMORPHOUSNESS AS A FUNCTION OF IRRADIATION FLUENCE IN A COMPOSITE MODEL OF DISORDER PRODUCTION [J]. RADIATION EFFECTS LETTERS, 1979, 43 (01): : 19 - 24

[5] Carter G., 1976, ION IMPLANTATION SEM

[6] DETERMINATION OF HIGH-DOSE IMPLANTATION PROFILES USING LOW-ANGLE RUTHERFORD BACKSCATTERING [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 219 - 224

[7] RUTHERFORD BACKSCATTERING ANALYSIS OF ION-IMPLANTED, THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) : 1651 - 1653

[8] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1119 - 1127

[9] EISEN FH, 1970, P EUROPEAN C ION IMP

[10] EISEN FH, 1973, CHANNELING, P415