DETERMINATION OF HIGH-DOSE IMPLANTATION PROFILES USING LOW-ANGLE RUTHERFORD BACKSCATTERING

被引：16

作者：

CHRISTODOULIDES, CE

GRANT, WA

WILLIAMS, JS

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1978年 / 149卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(78)90863-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：219 / 224

页数：6

共 18 条

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SCHULZ, F
[J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F): : 387 - 392
[2] CHRISTODOULIDES CE, UNPUBLISHED
[3] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS
CHU, WK
MAYER, JW
NICOLET, MA
BUCK, TM
AMSEL, G
EISEN, F
[J]. THIN SOLID FILMS, 1973, 17 (01) : 1 - 41
[4] FREEMAN JH, 1974, P INT C ION IMPLANTS
[5] GRANT WA, 1976, SCI PROG, V63, P27
[6] GRANT WA, 1977, 4TH P INT C ION IMPL
[7] SANTRY DC, 1975, PRCMA33 AECL PROGR R
[8] WHITTON JL, 1977, RAD EFF, V32, P115
[9] WHITTON JL, 1972, RAD EFF, V16, P107
[10] RECRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS .1. PB-ION IMPLANTED SI
WILLIAMS, JS
CHRISTODOULIDES, CE
GRANT, WA
ANDREW, R
BRAWN, JR
BOOTH, M
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 32 (1-2): : 55 - 66