RECRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS .1. PB-ION IMPLANTED SI

[1] ALKAISI M, TO BE PUBLISHED

[2] INFLUENCE OF IMPLANTED DOSE ON RECRYSTALLIZATION OF SI AMORPHOUS LAYER [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 154 - 155

[3] Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048

[4] Carter G., 1976, ION IMPLANTATION SEM

[5] Chadderton L. T., 1971, Radiation Effects, V7, P129, DOI 10.1080/00337577108232573

[6] ANNEALING OF DAMAGE PRODUCED BY COPPER-ION IMPLANTATION OF SILICON SINGLE-CRYSTALS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 23 (01): : 63 - 66

[7] CHRISTODOULIDES CE, TO BE PUBLISHED

[8] CHU WK, 1974, ION IMPLANTATION SEM, P177

[9] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[10] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[1] ALKAISI M, TO BE PUBLISHED

[2] INFLUENCE OF IMPLANTED DOSE ON RECRYSTALLIZATION OF SI AMORPHOUS LAYER [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 154 - 155

[3] Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048

[4] Carter G., 1976, ION IMPLANTATION SEM

[5] Chadderton L. T., 1971, Radiation Effects, V7, P129, DOI 10.1080/00337577108232573

[6] ANNEALING OF DAMAGE PRODUCED BY COPPER-ION IMPLANTATION OF SILICON SINGLE-CRYSTALS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 23 (01): : 63 - 66

[7] CHRISTODOULIDES CE, TO BE PUBLISHED

[8] CHU WK, 1974, ION IMPLANTATION SEM, P177

[9] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[10] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443