QUANTUM STATES INTERACTION IN HOT CARRIERS ACCUMULATION AND STIMULATED-EMISSION PROCESSES IN P-GE

被引：14

作者：

STOKLITSKIY, SA

机构：

[1] P.N. Lebedev Phys. Inst., Acad. of Sci., Moscow

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The role of quantum effects determined by interaction and mixing of light and heavy hole states in the scattering processes and population inversion of hot carriers in Ge in crossed E perpendicular-to H fields is studied. The results of experimental investigations of stimulated emission for intersubband and cyclotron transitions are presented, the experimental data being in good agreement with quantum model calculations.

引用

页码：B610 / B617

页数：8

共 22 条

[1]

GAVRILENKO VI, 1990, 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3, P2483

[2] REMARKABLE EFFECTS OF UNIAXIAL-STRESS ON STIMULATED FAR IR EMISSION FROM HOT HOLES IN GERMANIUM IN CROSSED ELECTRIC AND MAGNETIC-FIELDS [J].