ION-BEAM-INDUCED LUMINESCENCE IN NATURAL DIAMOND

被引:15
作者
SULLIVAN, PA
BARAGIOLA, RA
机构
[1] Laboratory for Atomic and Surface Physics, Engineering Physics, University of Virginia, Charlottesville
关键词
D O I
10.1063/1.357258
中图分类号
O59 [应用物理学];
学科分类号
摘要
We used ion beam induced luminescence (IBIL) to study the evolution of damage during ion implantation of natural type-IIa diamond with 30 keV carbon ions, for different sample temperatures in the range 35-300 K. Blue band-A luminescence decays with irradiation dose from an initial value of approximately 10(-3) photons/e-h pair. This decay was modeled to obtain an effective damage cross section of approximately 40 angstrom2, which is roughly independent of temperature. We explored the use of IBIL as a tool to characterize the processing of p-n junctions in natural type-IIb diamond and apply it to find conditions that determine the ultraviolet response of light-emitting diodes.
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页码:4847 / 4852
页数:6
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