ION-BEAM-INDUCED LUMINESCENCE IN NATURAL DIAMOND

We used ion beam induced luminescence (IBIL) to study the evolution of damage during ion implantation of natural type-IIa diamond with 30 keV carbon ions, for different sample temperatures in the range 35-300 K. Blue band-A luminescence decays with irradiation dose from an initial value of approximately 10(-3) photons/e-h pair. This decay was modeled to obtain an effective damage cross section of approximately 40 angstrom2, which is roughly independent of temperature. We explored the use of IBIL as a tool to characterize the processing of p-n junctions in natural type-IIb diamond and apply it to find conditions that determine the ultraviolet response of light-emitting diodes.