THIN-FILM ELECTROLUMINESCENT DEVICE EMPLOYING TA2O5 RF SPUTTERED INSULATING FILM

[1] INOGUCHI T, 1974, 1974 SID INT S, P84

[2] ELECTROLUMINESCENCE OF RARE-EARTH AND TRANSITION METAL MOLECULES IN 2-6 COMPOUNDS VIA IMPACT EXCITATION [J]. APPLIED PHYSICS LETTERS, 1968, 13 (06) : 210 - &

[3] NONAKA M, 1981, OMRON TECH, V20, P51

[4] LOW-THRESHOLD-VOLTAGE THIN-FILM ELECTROLUMINESCENT DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) : 698 - 702

[5] SAH J, 1978, APPL PHYS LETT, V33, P995

[6] TAKEDA M, 1980, 1980 SID INT S SAN D, P66

[7] TAKEDA M, 1975, J JAPAN SOC APP PH S, V44, P103

[8] TANAKA T, 1976, J APPL PHYS, V47, P5391

[9] Tannas L. E., 1981, 1981 SID International Symposium. Digest of Papers. Vol.XII, P22

[10] REFRACTIVE-INDEX-ADJUSTABLE SIO2-TA2O5 FILMS FOR INTEGRATED OPTICAL CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (10) : 666 - 668

[1] INOGUCHI T, 1974, 1974 SID INT S, P84

[2] ELECTROLUMINESCENCE OF RARE-EARTH AND TRANSITION METAL MOLECULES IN 2-6 COMPOUNDS VIA IMPACT EXCITATION [J]. APPLIED PHYSICS LETTERS, 1968, 13 (06) : 210 - &

[3] NONAKA M, 1981, OMRON TECH, V20, P51

[4] LOW-THRESHOLD-VOLTAGE THIN-FILM ELECTROLUMINESCENT DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) : 698 - 702

[5] SAH J, 1978, APPL PHYS LETT, V33, P995

[6] TAKEDA M, 1980, 1980 SID INT S SAN D, P66

[7] TAKEDA M, 1975, J JAPAN SOC APP PH S, V44, P103

[8] TANAKA T, 1976, J APPL PHYS, V47, P5391

[9] Tannas L. E., 1981, 1981 SID International Symposium. Digest of Papers. Vol.XII, P22

[10] REFRACTIVE-INDEX-ADJUSTABLE SIO2-TA2O5 FILMS FOR INTEGRATED OPTICAL CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (10) : 666 - 668