JOSEPHSON DEVICE WITH WELL-DEFINED AND LOW CRITICAL-POINTS

被引：2

作者：

BEHA, H

机构：

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1983年 / 19卷 / 03期

关键词：

D O I：

10.1109/TMAG.1983.1062321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1229 / 1233

页数：5

共 13 条

[1] 2-JOSEPHSON-JUNCTION INTERFEROMETER MEMORY CELL FOR NDRO [J].

BEHA, H .

ELECTRONICS LETTERS, 1977, 13 (20) :596-598

[2]

BEHA H, 1979, IEEE T MAGN, V15

[3]

BEHA H, 1982, IEEE J SOLID STATE C, V12

[4]

BEHA H, 1977, ELECTRON LETT, V13, P216

[5]

BEHA H, 1981, DIGITAL MEMORY CELLS

[6] NIOBIUM OXIDE BARRIER TUNNEL JUNCTION [J].

BROOM, RF ;

RAIDER, SI ;

OOSENBRUG, A ;

DRAKE, RE ;

WALTER, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (10) :1998-2008

[7] BASIC DESIGN OF A JOSEPHSON-TECHNOLOGY CACHE MEMORY [J].

FARIS, SM ;

HENKELS, WH ;

VALSAMAKIS, EA ;

ZAPPE, HH .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) :143-154

[8] JOSEPHSON EDGE DETECTOR, A NOVEL SWITCHING ELEMENT [J].

FARIS, SM ;

DAVIDSON, A .

IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (01) :416-419

[9] JOSEPHSON-LOGIC DEVICES AND CIRCUITS [J].

GHEEWALA, TR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (10) :1857-1869

[10]

GUERET P, 1972, IEEE T MAGN, V13, P52

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