EPITAXIAL MGO BUFFER LAYERS FOR YBA2CU3O7-X THIN-FILM ON GAAS

被引：59

作者：

CHANG, LD

TSENG, MZ

HU, EL

FORK, DK

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

[2] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 14期

关键词：

D O I：

10.1063/1.107207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial MgO thin films have been grown on GaAs using electron beam (e-beam) evaporation. X-ray diffraction indicates that the epitaxial relations are MgO[001]//GaAs[001] and MgO[110]//GaAs[110]. The rocking curve widths are less than 1.5-degrees. The refractive index is 1.73 and the dielectric strength is in excess of 4 X 10(6) V/cm. The MgO epitaxial films were used as a buffer layer for the growth of in situ YBa2Cu3O7-x on GaAs. The room-temperature resistivity of this film is 450-530-mu-OMEGA cm and T(c) (R = 0) is 85-87 K. The critical current density at 77 K is 4-6.7 X 10(4) and 1-3.8 X 10(6) A/cm2 at 4.2 K, in zero applied Field.

引用

页码：1753 / 1755

页数：3