HIGH-POWER, 60W QUASI-CW, VISIBLE LASER DIODE-ARRAYS

被引：5

作者：

HADEN, JM

NAM, DW

WELCH, DF

ENDRIZ, JG

SCIFRES, DR

机构：

[1] Spectra Diode Laboratories, San Jose, CA 95134

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 05期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Visible spectrum diode arrays have been fabricated from (AlxGa1-x)0.5In0.5P-Ga0.4In0.6P quantum well heterostructures operating to high output powers at wavelengths of approximately 690 nm. Bars 7.5 mm long with 110-mu-m broad area emitting apertures on 125-mu-m centers have reached quasi-CW output powers of 60 W.

引用

页码：451 / 452

页数：2

共 6 条

[1] LASER AND SPECTRAL PROPERTIES OF CR, TM, HO - YAG AT 2.1 MU-M [J].

BOWMAN, SR ;

WININGS, MJ ;

AUYEUNG, RCY ;

TUCKER, JE ;

SEARLES, SK ;

FELDMAN, BJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (09) :2142-2149

[2]

BOWMAN SR, 1990, P SPIE SOLID STATE L, P221

[3]

HARNAGEL GL, 1990, SPIE OELASE121919 PA

[4]

HUTCHINSON JA, C LASERS ELECTROOPTI

[5]

SCHEPS R, 1991, P SPIE, P190

[6] HIGH-POWER, 8.5W CW, VISIBLE LASER-DIODES [J].

WELCH, DF ;

SCIFRES, DR .

ELECTRONICS LETTERS, 1991, 27 (21) :1915-1916

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