HIGH-POWER, 8.5W CW, VISIBLE LASER-DIODES

被引：21

作者：

WELCH, DF

SCIFRES, DR

机构：

[1] Spectra Diode Laboratories, San Jose, CA 95134

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 21期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19911189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Visible laser diodes have been fabricated from AlGaInP operating at approximately 680 nm to high output powers. Broad area lasers with 100-mu-m wide emitting apertures operate to greater than 1 W CW with a differential efficiency of 38%. The threshold current densities of the material have been measured to be as low as 350 A/cm2 for lasers with 30% mirror reflectivities. Monolithic bars 8 mm long with 50-mu-m emitting apertures periodically spaced on 500-mu-m centres have been fabricated which operate to 8.5 W CW.

引用

页码：1915 / 1916

页数：2

共 8 条

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