EFFECTS OF STRAINED-LAYER STRUCTURES ON THE THRESHOLD CURRENT-DENSITY OF ALGAINP/GAINP VISIBLE LASERS

被引：53

作者：

HASHIMOTO, J

KATSUYAMA, T

SHINKAI, J

YOSHIDA, I

HAYASHI, H

机构：

[1] Optoelectronics R and D Laboratories, Sumitomo Electric Industries Ltd., Sakae-ku, Yokohama 244, 1, Taya-cho

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 09期

关键词：

D O I：

10.1063/1.104492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of strained-layer structures on the reduction of the threshold current density of AlGaInP/GaInP visible laser diodes. It was found that a remarkable reduction of the threshold current density could be realized by incorporating strained single quantum well structures in their active regions. The minimum threshold current density at room temperature under pulsed conditions is 215 A/cm2, which is by far the lowest value ever reported for AlGaInP/GaInP visible lasers and comparable to those of AlGaAs/GaAs lasers.

引用

页码：879 / 880

页数：2

共 10 条

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