INGAP/INGAAIP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM-WELL LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：77

作者：

TANAKA, H

KAWAMURA, Y

NOJIMA, S

WAKITA, K

ASAHI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1713 / 1719

页数：7

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