VERY LOW THRESHOLD CURRENT ALGAINP/GAXIN1-XP STRAINED SINGLE QUANTUM-WELL VISIBLE LASER DIODE

被引：28

作者：

KATSUYAMA, T

YOSHIDA, I

SHINKAI, J

HASHIMOTO, J

HAYASHI, H

机构：

[1] Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd., Yokohama, Taya-cho, Sakae-ku

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 17期

关键词：

Semiconductor junction lasers;

D O I：

10.1049/el:19900884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The successful operation of a separate confinement heterostructure (SCH) AlGaInP/GaxIn1-xP (x = 0.43) strained single quantum well (SSQW) laser has been achieved for the first time. A threshold current of 18 mA at 25°C, the lowest value ever reported for AlGaInP/GaInP lasers, was obtained by a 10 x 200 μ index guided laser diode at an emission wavelength of 691 nm. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1375 / 1377

页数：3

共 7 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].