LASER-STIMULATED NONTHERMAL PARTICLE-EMISSION FROM INP AND GAAS-SURFACES

被引：14

作者：

RAFF, M

SCHUTZE, M

TRAPPE, C

HANNOT, R

KURZ, H

机构：

[1] Institute of Semiconductor Electronics, Rheinisch-Westfälische Technische Hochschule Aachen

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.50.11031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Particle emission from InP and GaAs surfaces induced by picosecond laser pulses of photon energies above the band-gap energy has been studied by means of crater-depth measurements. Below the melting threshold, the amount of atoms sublimated per laser pulse indicates that nonthermal processes are dominant. The crater profile shows a strong power dependence of the yield on the laser fluence. Both emission yield and crater profile can be explained by nonradiative energy transfer from recombining electron-hole pairs to atoms at surface sites.

引用

页码：11031 / 11036

页数：6

共 41 条

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].