PHASE MODULATION CHARACTERISTICS OF 1.5 MU-M STRAINED-LAYER MULTIPLE QUANTUM-WELL LASER-AMPLIFIERS

被引:3
作者
REICHENBACH, D
ZAH, CE
ANDREADAKIS, N
FAVIRE, FJ
MENOCAL, SG
VODHANEL, R
YIYAN, A
LEE, TP
机构
[1] Bellcore, NJ 07701, 331 Newman Springs Road, Red Bank
关键词
Phase modulation; Semiconductor lasers;
D O I
10.1049/el:19901195
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Phase modulation characteristics of strained-layer multiple quantum well laser amplifiers were measured to 4 GHz. A phase modulation efficiency of 2.6°/mA was observed at lGHz, with a fibre-to-fibre gain of 7dB and a residual AM modulation of 5%. The characteristics are independent of the input power up to-12dBm. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:1858 / 1860
页数:3
相关论文
共 5 条
[1]   BROAD-BAND OPERATION OF INGAASP-INGAAS GRIN-SC-MQW BH AMPLIFIERS WITH 115MW OUTPUT POWER [J].
BAGLEY, M ;
SHERLOCK, G ;
COOPER, DM ;
WESTBROOK, LD ;
ELTON, DJ ;
WICKES, HJ ;
SPURDENS, PC ;
DEVLIN, WJ .
ELECTRONICS LETTERS, 1990, 26 (08) :512-513
[2]   LARGE-SIGNAL AND SMALL-SIGNAL GAIN CHARACTERISTICS OF 1.5-MU-M MULTIPLE QUANTUM-WELL OPTICAL AMPLIFIERS [J].
EISENSTEIN, G ;
KOREN, U ;
RAYBON, G ;
KOCH, TL ;
WIESENFELD, JM ;
WEGENER, M ;
TUCKER, RS ;
MILLER, BI .
APPLIED PHYSICS LETTERS, 1990, 56 (13) :1201-1203
[3]   COHERENT DETECTION OF 565-MBIT/S DPSK DATA USING SEMICONDUCTOR-LASER AMPLIFIER AS PHASE MODULATOR [J].
MELLIS, J ;
CREANER, MJ .
ELECTRONICS LETTERS, 1989, 25 (10) :680-682
[4]   DIRECT OPTICAL-PHASE MODULATION IN SEMICONDUCTOR-LASER AMPLIFIER [J].
MELLIS, J .
ELECTRONICS LETTERS, 1989, 25 (10) :679-680
[5]  
ZAH CE, 1990, 12TH IEEE INT SEM LA