LOW-NOISE HEMT FABRICATED BY MOCVD

被引：8

作者：

TAKAKUWA, H ^{[1
]}

KATO, Y ^{[1
]}

WATANABE, S ^{[1
]}

MORI, Y ^{[1
]}

机构：

[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA 240,JAPAN

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 04期

关键词：

MICROWAVE DEVICES - TRANSISTORS - Noise;

D O I：

10.1049/el:19850088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low noise HEMTs with GaAlAs/GaAs heterostructures have been successfully fabricated using metal organic chemical vapour deposition (MOCVD). Hall mobilities of the two-dimensional electron gas at the interface are 8000 and 148,000 cm**2/Vs at 300 and 77 K. These are comparable to the best results yet reported using molecular beam epitaxy (MBE). The HEMTs fabricated by MOCVD with a 0. 8 mu m-long gate have exhibited a noise figure of 1. 47 dB with 9 dB associated gain at 12 GHz and transconductance of 190 mS/mm.

引用

页码：125 / 126

页数：2

共 7 条

[1] KAMEI K, 1984, INT S GALLIUM ARSENI
[2] PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KAWAI, H
KANEKO, K
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 463 - 467
[3] KAWAI H, 1984, J CRYST GROWTH, V68, P406, DOI 10.1016/0022-0248(84)90442-1
[4] KOBAYASHI N, 1984, ELECTRON LETT, V20, P887, DOI 10.1049/el:19840602
[5] LEE CP, 1983, OCT P IEEE GAAS IC S, P152
[6] MORI Y, 1982, J PHYS S12, V5, P271
[7] NISHIUCHI K, 1984 IEEE INT SOL ST, P48

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