CE-CATALYZED OXIDATION OF TA(110)

被引：11

作者：

GU, C ^{[1
]}

LYNCH, DW ^{[1
]}

YANG, AB ^{[1
]}

OLSON, CG ^{[1
]}

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,AMES LAB,AMES,IA 50011

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.42.1526

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoemission spectroscopy was used to investigate the initial oxidation of the Ce/Ta(110) interface at room temperature. The oxidation of Ta(110) is dramatically enhanced by a thin Ce overlayer. A Ta suboxide TaO (0.5**1) is formed first in the interface, followed by the rapid formation of Ta2O5 upon further oxygen exposure. A weak interface reaction exists in Ce/Ta(110), but is excluded as the main cause of the catalytic oxidation. An earlier suggestion is reconfirmed that the Ce layer converts O2 to oxygen ions and thus promotes the oxidation of the substrate. © 1990 The American Physical Society.

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页码：1526 / 1532

页数：7

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