HEAVY-ION CHANNELING IMPLANTATION PROCESSES IN SINGLE-CRYSTALS

被引：3

作者：

ABBAS, M ^{[1
]}

KERKOW, H ^{[1
]}

WEDELL, R ^{[1
]}

机构：

[1] HUMBOLDT UNIV,SEKT PHYS,O-1040 BERLIN,GERMANY

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 159卷 / 02期

关键词：

D O I：

10.1002/pssb.2221590209

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Implantations of Ne‐, Mg‐ and Ca‐ions into silicon have been performed for different channeling orientations with energies ranging from 30 to 300 keV. The produced radiation damage distributions are investigated by using RBS, the depth distributions of implanted foreign atoms are measured by SIMS. A correlation between dechanneling, damage production, and depth distributions of the channeled ions could be observed. Simple models for dechanneling and energy losses allow an explanation of some experimental results. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：597 / 608

页数：12

共 18 条

[1]

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[2]

ABBAS M, 1989, THESIS BERLIN

[3]

BENNER U, 1987, THESIS HUMBOLDT U BE

[4] CHANNELING AND RANDOM EQUIVALENT DEPTH DISTRIBUTIONS OF 150 KEV LI, BE, AND B IMPLANTED IN SI [J].