AN INVESTIGATION OF THE SENSITIVITY OF LATERAL MAGNETOTRANSISTORS

[1] MITNIKOVA IM, 1978, SOV PHYS SEMICOND+, V12, P26

[2] POPOVIC RS, UNPUB HELVETICA PHYS

[3] POPOVIC RS, 1982, OCT FALL M SWISS PHY, P48

[4] Sze S. M, 1981, PHYSICS SEMICONDUCTO

[5] MAGNETIC TRANSISTOR BEHAVIOR EXPLAINED BY MODULATION OF EMITTER INJECTION, NOT CARRIER DEFLECTION [J]. ELECTRON DEVICE LETTERS, 1982, 3 (08): : 203 - 205

[6] MAGNETIC-FIELD-SENSITIVE MULTICOLLECTOR N-P-N TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) : 83 - 90

[1] MITNIKOVA IM, 1978, SOV PHYS SEMICOND+, V12, P26

[2] POPOVIC RS, UNPUB HELVETICA PHYS

[3] POPOVIC RS, 1982, OCT FALL M SWISS PHY, P48

[4] Sze S. M, 1981, PHYSICS SEMICONDUCTO

[5] MAGNETIC TRANSISTOR BEHAVIOR EXPLAINED BY MODULATION OF EMITTER INJECTION, NOT CARRIER DEFLECTION [J]. ELECTRON DEVICE LETTERS, 1982, 3 (08): : 203 - 205

[6] MAGNETIC-FIELD-SENSITIVE MULTICOLLECTOR N-P-N TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) : 83 - 90