MAGNETIC-FIELD-SENSITIVE MULTICOLLECTOR N-P-N TRANSISTORS

[1] HALL EFFECT AND RELATED PHENOMENA [J]. SOLID-STATE ELECTRONICS, 1966, 9 (05) : 339 - &

[2] CUSHMAN RH, 1969, EDN 0215, P73

[3] DAVIES LW, 1971, JUN P IREE AUSTR, P235

[4] SILICON DEPLETION LAYER MAGNETOMETER [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2750 - &

[5] HALBO L, 1980, 1980 SOC AUT ENG C E

[6] EFFECTS OF DISTRIBUTED BASE POTENTIAL ON EMITTER-CURRENT INJECTION DENSITY + EFFECTIVE BASE RESISTANCE FOR STRIPE TRANSISTOR GEOMETRIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (05) : 238 - &

[7] HUDSON EC, 1968, Patent No. 3389230

[8] MANLEY MH, 1978, SOLID STATE ELECTRON, V2, P176

[9] MITNIKOVA IM, 1978, SOV PHYS SEMICOND+, V12, P26

[10] CONTROLLED CURRENT FILAMENTS IN PNIPN STRUCTURES WITH APPLICATION TO MAGNETIC-FIELD DETECTION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (03): : 467 - 502

[1] HALL EFFECT AND RELATED PHENOMENA [J]. SOLID-STATE ELECTRONICS, 1966, 9 (05) : 339 - &

[2] CUSHMAN RH, 1969, EDN 0215, P73

[3] DAVIES LW, 1971, JUN P IREE AUSTR, P235

[4] SILICON DEPLETION LAYER MAGNETOMETER [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2750 - &

[5] HALBO L, 1980, 1980 SOC AUT ENG C E

[6] EFFECTS OF DISTRIBUTED BASE POTENTIAL ON EMITTER-CURRENT INJECTION DENSITY + EFFECTIVE BASE RESISTANCE FOR STRIPE TRANSISTOR GEOMETRIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (05) : 238 - &

[7] HUDSON EC, 1968, Patent No. 3389230

[8] MANLEY MH, 1978, SOLID STATE ELECTRON, V2, P176

[9] MITNIKOVA IM, 1978, SOV PHYS SEMICOND+, V12, P26

[10] CONTROLLED CURRENT FILAMENTS IN PNIPN STRUCTURES WITH APPLICATION TO MAGNETIC-FIELD DETECTION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (03): : 467 - 502