SILICON DEPLETION LAYER MAGNETOMETER

[1] BROWN CB, 1950, PHYS REV, V76, P1736

[2] BROWN CB, 1950, ELECTRONICS, V23, P81

[3] TOTAL ACTIVE AREA SILICON PHOTODIODE ARRAY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (10) : 877 - &

[4] A SILICON MOS MAGNETIC FIELD TRANSDUCER OF HIGH SENSITIVITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 35 - +

[5] A SILICON HALL ELEMENT FOR APPLICATION IN AN ANALOG MULTIPLIER [J]. SOLID-STATE ELECTRONICS, 1964, 7 (05) : 379 - &

[6] TEMPERATURE DEPENDENCE OF HALL MOBILITY AND MUH-MUD FOR SI [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1539 - &

[7] SMITH RA, 1961, SEMICONDUCTORS, P122

[8] TRIVEDI PC, 1959, ELECTRONIC RADIO ENG, V36, P368

[9] 1969, ELECTRONIC DESIGN NE, P73

[1] BROWN CB, 1950, PHYS REV, V76, P1736

[2] BROWN CB, 1950, ELECTRONICS, V23, P81

[3] TOTAL ACTIVE AREA SILICON PHOTODIODE ARRAY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (10) : 877 - &

[4] A SILICON MOS MAGNETIC FIELD TRANSDUCER OF HIGH SENSITIVITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 35 - +

[5] A SILICON HALL ELEMENT FOR APPLICATION IN AN ANALOG MULTIPLIER [J]. SOLID-STATE ELECTRONICS, 1964, 7 (05) : 379 - &

[6] TEMPERATURE DEPENDENCE OF HALL MOBILITY AND MUH-MUD FOR SI [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1539 - &

[7] SMITH RA, 1961, SEMICONDUCTORS, P122

[8] TRIVEDI PC, 1959, ELECTRONIC RADIO ENG, V36, P368

[9] 1969, ELECTRONIC DESIGN NE, P73