A SILICON MOS MAGNETIC FIELD TRANSDUCER OF HIGH SENSITIVITY

被引:36
作者
FRY, PW
HOEY, SJ
机构
[1] Group Research Laboratoties, Plessey Company Ltd., Poole, Dorset
关键词
D O I
10.1109/T-ED.1969.16563
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A structure has been devised which converts magnetic flux density change to a change in output current. The structure is essentially a P-channel MOST with the drain diffusion split into two halves. A magnetic field normal to the silicon surface deflects device current towards one half-drain. By operating the MOST in the “pinched-off mode (VDS> VGS- VT) the output impedance is made high, so that large output voltage swings may be obtained. A theoretical study of the voltage and current distributions in the MOST channel has given data on the influence of device geometry on sensitivity. Experimental results indicate a linear relationship between output current and magnetic flux density, and an unexplained nonlinear variation of output with device current. Comparison of experimental results with theory indicates a carrier Hall mobility in the channel of 116 cm2/V·s. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:35 / +
页数:1
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